科技科学

Wafer-scale epitaxy growth of high-mobility p-type boron carbon nitride

Nature作者：Chien-Chih Tseng2026年9月30日查看原文 ↗

Data availability

The data that support the findings of this study can be found in the paper and the Supplementary Information and are available from the corresponding authors upon request.

Code availability

The DFT calculations were performed using VASP v.6.3.2, which is commercially available at https://www.vasp.at/. The custom scripts and VASP input files generated during the current study are available from the corresponding authors upon request.

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Acknowledgements

V.T. acknowledges the equipment support from TuoTuo Technology (lithography), Enli-Technology (Probe station), Kate Chuang (illustration design) and Kao Duen Technology. We thank C.-Y. Tien, A. Yamada, K. Takanabe and C.-C. Chang for their discussions.

Funding

C.-C.T., J.-H.F. and V.T. are indebted to the financial support from the Japan Society for the Promotion of Science (JSPS, 26H02218, 23H00253, 24K21233 and 25KF0196), JST ASPIRE (grant no. JPMJAP2531), and JST CREST (grant no. JPMJCR24A3). W.-C.C. and F.-Z.C. acknowledge the support from NSTC 113-2119-M-492-001-MBK and NSTC 114-2622-E-492-001. J.-C.K. and C.-W.P. thank the support from the Academia Sinica Investigator Award (grant no. AS-IA-112-M05) and the National Science and Technology Council, Taiwan (111-2112-M-001-085-MY3). We thank the National Center for High-performance Computing (NCHC) for providing computational and storage resources. C.-H.H. and Y.-C.C. acknowledge the support from the Partnership Program for the Connection to the Top Labs in the World—Dragon Gate Program (113-2926-I-002-511-G) and 113-2628-E-002-021-MY4. J.-C.K. and Y.-C.L. acknowledge the support from NSTC (grant no. 113-2221-E-A49-012-MY3). M.-C.W. and V.T. express their gratitude for the financial support provided by the Chang Gung University (URRPD2Q0041).

Author information

Author notes

  1. These authors contributed equally: Chien-Chih Tseng, Chang-Hsun Huang, Jui-Cheng Kao

Authors and Affiliations

  1. Department of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo, Japan

    Chien-Chih Tseng, Jui-Han Fu, Seong Rae Cho, Chenxi Lei, Kai Qi & Vincent Tung

  2. Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan

    Chang-Hsun Huang & Yi-Chia Chou

  3. Department of Materials Science and Engineering, National Yang-Ming Chiao Tung University, Hsinchu, Taiwan

    Jui-Cheng Kao & Yu-Chieh Lo

  4. Research Centre for Applied Sciences, Academia Sinica, Taipei, Taiwan

    Jui-Cheng Kao, Po-Yu Yang & Chun-Wei Pao  (包 淳偉)

  5. Institute of Engineering Innovation, The University of Tokyo, Tokyo, Japan

    Aowen Li, Ryo Ishikawa & Naoya Shibata

  6. Research Center for Electronic and Optical Materials, National Institute for Materials Science (NIMS), Tsukuba, Japan

    Chih-Zong Deng & Ya-Lun Ho

  7. Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan

    Cheng-Tang Pan

  8. National Center for Instrumentation Research, National Institutes of Applied Research, Hsinchu, Taiwan

    Cheng-Tang Pan, Wei-Chun Chen, Fong-Zhi Chen & Yu-Wei Lin

  9. Center for Heterogeneous and Innovative Post-Silicon Materials (CHIPs), Chang Gung University, Taoyuan, Taiwan

    Ming-Chung Wu & Vincent Tung

  10. Center for Sustainability and Energy Technologies, Chang Gung University, Taoyuan, Taiwan

    Ming-Chung Wu

  11. Department of Chemical and Materials Engineering, Chang Gung University, Taoyuan, Taiwan

    Ming-Chung Wu & Vincent Tung

  12. Department of Engineering and System Science, National Tsing Hua University, Hsinchu City, Taiwan

    Yu-Wei Lin

  13. Department of Materials Engineering, The University of Tokyo, Tokyo, Japan

    Kosuke Nagashio

  14. Physics Division, National Centre for Theoretical Sciences, Taipei, Taiwan

    Chun-Wei Pao  (包 淳偉)

Authors

  1. Chien-Chih Tseng
  2. Chang-Hsun Huang
  3. Jui-Cheng Kao
  4. Jui-Han Fu
  5. Aowen Li
  6. Ryo Ishikawa
  7. Seong Rae Cho
  8. Chenxi Lei
  9. Kai Qi
  10. Chih-Zong Deng
  11. Po-Yu Yang
  12. Cheng-Tang Pan
  13. Wei-Chun Chen
  14. Ming-Chung Wu
  15. Fong-Zhi Chen
  16. Yu-Wei Lin
  17. Yu-Chieh Lo
  18. Ya-Lun Ho
  19. Kosuke Nagashio
  20. Yi-Chia Chou
  21. Naoya Shibata
  22. Chun-Wei Pao  (包 淳偉)
  23. Vincent Tung

Contributions

C.-C.T., J.-H.F. and V.T. conceived the study. C.-C.T., C.-H.H. and S.R.C. performed the experiments and analysed the data. J.-C.K., P.-Y.Y., Y.-C.L. and C.-W.P. performed the DFT and PES calculations. A.L., R.I. and N.S. performed the HR-STEM characterizations. K.Q. and C.-C.T. conducted the KPFM and STS/M. C.L. established the CVD setup. W.-C.C., Y.-W.L., C.-T.P., M.-C.W. and F.-Z.C. deposited the HfO2 dielectric. K.N., Y.-L.H. and C.-Z.D. designed the electrode patterns and analysed the transfer and output characteristics of BCN FETs. C.-H.H., J.-C.K., Y.-C.C., J.-H.F., C.-W.P. and V.T. wrote the paper. All the authors discussed the results and contributed to the final version of this manuscript.

Corresponding authors

Correspondence to Jui-Han Fu, Yi-Chia Chou, Chun-Wei Pao  (包 淳偉) or Vincent Tung.

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Nature thanks Sang-Hoon Bae, Yong-Young Noh and the other, anonymous, reviewer(s) for their contribution to the peer review of this work. Peer reviewer reports are available.

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Tseng, CC., Huang, CH., Kao, JC. et al. Wafer-scale epitaxy growth of high-mobility p-type boron carbon nitride. Nature (2026). https://doi.org/10.1038/s41586-026-11047-9

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