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Anomalous metal and superconducting phases in rhombohedral graphene

Nature作者：Anna Okounkova2026年9月23日正文已收录本站

Data availability

The data shown in the figures are available from https://doi.org/10.5281/zenodo.21844495 (ref. 58). Other data that support the findings of this study are available from the corresponding authors on request.

References

  1. Cao, Y. et al. Unconventional superconductivity in magic-angle graphene superlattices. Nature 556, 43–50 (2018).

    Article  ADS  CAS  PubMed  Google Scholar 

  2. Zhou, H., Xie, T., Taniguchi, T., Watanabe, K. & Young, A. F. Superconductivity in rhombohedral trilayer graphene. Nature 598, 434–438 (2021).

    Article  ADS  CAS  PubMed  Google Scholar 

  3. Zhou, H. et al. Isospin magnetism and spin-polarized superconductivity in Bernal bilayer graphene. Science 375, 774–778 (2022).

    Article  ADS  CAS  PubMed  Google Scholar 

  4. Zhang, Y. et al. Enhanced superconductivity in spin–orbit proximitized bilayer graphene. Nature 613, 268–273 (2023).

    Article  ADS  CAS  PubMed  Google Scholar 

  5. Han, T. et al. Signatures of chiral superconductivity in rhombohedral graphene. Nature 643, 654–661 (2025).

    Article  ADS  CAS  PubMed  Google Scholar 

  6. Kumar, M. et al. Superconductivity from dual-surface carriers in rhombohedral graphene. Nat. Phys. 22, 862–869 (2026).

    Article  CAS  Google Scholar 

  7. Holleis, L. et al. Nematicity and orbital depairing in superconducting Bernal bilayer graphene. Nat. Phys. 21, 444–450 (2025).

    Article  CAS  Google Scholar 

  8. Zhang, Y. et al. Twist-programmable superconductivity in spin–orbit-coupled bilayer graphene. Nature 641, 625–631 (2025).

    Article  ADS  CAS  PubMed  Google Scholar 

  9. Yang, J. et al. Impact of spin–orbit coupling on superconductivity in rhombohedral graphene. Nat. Mater. 24, 1058–1065 (2025).

    Article  CAS  PubMed  Google Scholar 

  10. Seo, J. et al. Family of unconventional superconductivities in crystalline graphene. Nature 656, 60–66 (2026).

  11. Deng, J. et al. Superconductivity and ferroelectric orbital magnetism in semimetallic rhombohedral hexalayer graphene. Preprint at https://arxiv.org/abs/2508.15909 (2026).

  12. Kumar, M. et al. Pervasive spin-triplet superconductivity in rhombohedral graphene. Preprint at https://arxiv.org/abs/2511.16578 (2026).

  13. Guo, Y. et al. Flat band surface state superconductivity in thick rhombohedral graphene. Preprint at https://arxiv.org/abs/2511.17423 (2025).

  14. Xie, J. et al. Magnetic-field-driven insulator-superconductor transition in rhombohedral graphene. Phys. Rev. Lett. 136, 176505 (2026).

    Article  ADS  CAS  PubMed  Google Scholar 

  15. Deng, J. et al. Magnetic-field-induced superconductivity in hexalayer rhombohedral graphene. Preprint at https://arxiv.org/abs/2603.13498 (2026).

  16. Das, D. & Doniach, S. Existence of a Bose metal at T = 0. Phys. Rev. B 60, 1261 (1999).

    Article  ADS  CAS  Google Scholar 

  17. Kapitulnik, A., Kivelson, S. A. & Spivak, B. Colloquium: Anomalous metals: failed superconductors. Rev. Mod. Phys. 91, 011002 (2019).

    Article  ADS  MathSciNet  CAS  Google Scholar 

  18. Li, C. et al. Tunable superconductivity in electron- and hole-doped Bernal bilayer graphene. Nature 631, 300–306 (2024).

    Article  ADS  CAS  PubMed  Google Scholar 

  19. Patterson, C. L. et al. Superconductivity and spin canting in spin–orbit-coupled trilayer graphene. Nature 641, 632–638 (2025).

    Article  ADS  CAS  PubMed  Google Scholar 

  20. Choi, Y. et al. Superconductivity and quantized anomalous Hall effect in rhombohedral graphene. Nature 639, 342–347 (2025).

    Article  ADS  CAS  PubMed  Google Scholar 

  21. Morissette, E. et al. Superconductivity, anomalous Hall effect, and stripe order in rhombohedral hexalayer graphene. Preprint at https://arxiv.org/abs/2504.05129 (2025).

  22. Nguyen, R. Q. et al. A hierarchy of superconductivity and topological charge density wave states in rhombohedral graphene. Preprint at https://arxiv.org/abs/2507.22026 (2025).

  23. Yang, J. et al. Magnetic field-enhanced graphene superconductivity with record Pauli-limit violation. Preprint at https://arxiv.org/abs/2510.10873 (2026).

  24. White, A. E., Dynes, R. C. & Garno, J. P. Destruction of superconductivity in quench-condensed two-dimensional films. Phys. Rev. B 33, 3549 (1986).

    Article  ADS  CAS  Google Scholar 

  25. Jaeger, H. M., Haviland, D. B., Orr, B. G. & Goldman, A. M. Onset of superconductivity in ultrathin granular metal films. Phys. Rev. B 40, 182–196 (1989).

    Article  ADS  CAS  Google Scholar 

  26. Merchant, L., Ostrick, J., Barber Jr, R. P. & Dynes, R. C. Crossover from phase fluctuation to amplitude-dominated superconductivity: a model system. Phys. Rev. B 63, 134508 (2001).

    Article  ADS  Google Scholar 

  27. Ephron, D., Yazdani, A., Kapitulnik, A. & Beasley, M. R. Observation of quantum dissipation in the vortex state of a highly disordered superconducting thin film. Phys. Rev. Lett. 76, 1529 (1996).

    Article  ADS  CAS  PubMed  Google Scholar 

  28. Mason, N. & Kapitulnik, A. True superconductivity in a two-dimensional superconducting-insulating system. Phys. Rev. B 64, 060504(R) (2001).

    Article  ADS  Google Scholar 

  29. Breznay, N. P. & Kapitulnik, A. Particle-hole symmetry reveals failed superconductivity in the metallic phase of two-dimensional superconducting films. Sci. Adv. 3, e1700612 (2017).

    Article  ADS  PubMed  PubMed Central  Google Scholar 

  30. Garcia-Barriocanal, J. et al. Electronically driven superconductor-insulator transition in electrostatically doped La2CuO4+δ thin films. Phys. Rev. B 87, 024509 (2013).

    Article  ADS  Google Scholar 

  31. Ye, J. T. et al. Superconducting dome in a gate-tuned band insulator. Science 338, 1193–1196 (2012).

    Article  ADS  CAS  PubMed  Google Scholar 

  32. Saito, Y., Kasahara, Y., Ye, J., Iwasa, Y. & Nojima, T. Metallic ground state in an ion-gated two-dimensional superconductor. Science 350, 409–413 (2015).

    Article  ADS  MathSciNet  CAS  PubMed  Google Scholar 

  33. Rimberg, A. J. et al. Dissipation-driven superconductor-insulator transition in a two-dimensional Josephson-junction array. Phys. Rev. Lett. 78, 2632 (1997).

    Article  ADS  CAS  Google Scholar 

  34. Eley, S., Gopalakrishnan, S., Goldbart, P. M. & Mason, N. Approaching zero-temperature metallic states in mesoscopic superconductor–normal–superconductor arrays. Nat. Phys. 8, 59–62 (2012).

    Article  CAS  Google Scholar 

  35. Han, Z. et al. Collapse of superconductivity in a hybrid tin-graphene Josephson junction array. Nat. Phys. 10, 380–386 (2014).

    Article  CAS  Google Scholar 

  36. Bøttcher, C. G. L. et al. Superconducting, insulating and anomalous metallic regimes in a gated two-dimensional semiconductor–superconductor array. Nat. Phys. 14, 1138–1144 (2018).

    Article  Google Scholar 

  37. Bøttcher, C. G. L., Nichele, F., Shabani, J., Palmstrøm, C. J. & Marcus, C. M. Berezinskii-Kosterlitz-Thouless transition and anomalous metallic phase in a hybrid Josephson junction array. Phys. Rev. B 110, L180502 (2024).

    Article  ADS  Google Scholar 

  38. Sasmal, S. et al. Voltage-tuned anomalous-metal to metal transition in hybrid Josephson junction arrays. Phys. Rev. Lett. 135, 156301 (2025).

    Article  ADS  CAS  PubMed  Google Scholar 

  39. Haviland, D. B., Liu, Y. & Goldman, A. M. Onset of superconductivity in the two-dimensional limit. Phys. Rev. Lett. 62, 2180–2183 (1989).

    Article  ADS  CAS  PubMed  Google Scholar 

  40. Yazdani, A. & Kapitulnik, A. Superconducting-insulating transition in two-dimensional a-MoGe thin films. Phys. Rev. Lett. 74, 3037 (1995).

    Article  ADS  CAS  PubMed  Google Scholar 

  41. Mason, N. & Kapitulnik, A. Dissipation effects on the superconductor-insulator transition in 2D superconductors. Phys. Rev. Lett. 82, 5341 (1999).

    Article  ADS  CAS  Google Scholar 

  42. Chen, Z. et al. Carrier density and disorder tuned superconductor-metal transition in a two-dimensional electron system. Nat. Commun. 9, 4008 (2018).

    Article  ADS  PubMed  PubMed Central  Google Scholar 

  43. Couëdo, F. et al. Dissipative phases across the superconductor-to-insulator transition. Sci. Rep. 6, 35834 (2016).

    Article  ADS  PubMed  PubMed Central  Google Scholar 

  44. Phillips, P. & Dalidovich, D. The elusive Bose metal. Science 302, 243–247 (2003).

    Article  ADS  CAS  PubMed  Google Scholar 

  45. Tamir, I. et al. Sensitivity of the superconducting state in thin films. Sci. Adv. 5, eaau3826 (2019).

    Article  ADS  CAS  PubMed  PubMed Central  Google Scholar 

  46. Léonard, K. W. et al. Microwave radiometry of a quantum-critical hybrid Josephson array. Phys. Rev. Appl. 26, 014031 (2026).

    Article  Google Scholar 

  47. Sacépé, B., Feigel’man, M. V. & Klapwijk, T. M. Quantum breakdown of superconductivity in low-dimensional materials. Nat. Phys. 16, 734–746 (2020).

    Article  Google Scholar 

  48. Aslamazov, L. G. & Larkin, A. I. The influence of fluctuation pairing of electrons on the conductivity of normal metal. Phys. Lett. A 26, 238–239 (1968).

    Article  ADS  Google Scholar 

  49. Larkin, A. & Varlamov, A. Theory of Fluctuations in Superconductors (Oxford Univ. Press, 2005).

  50. Caldeira, A. O. & Leggett, A. J. Influence of dissipation on quantum tunneling in macroscopic systems. Phys. Rev. Lett. 46, 211 (1981).

    Article  ADS  Google Scholar 

  51. Kapitulnik, A., Mason, N., Kivelson, S. A. & Chakravarty, S. Effects of dissipation on quantum phase transitions. Phys. Rev. B 63, 125322 (2001).

    Article  ADS  Google Scholar 

  52. Spivak, B., Oreto, P. & Kivelson, S. A. Theory of quantum metal to superconductor transitions in highly conducting systems. Phys. Rev. B 77, 214523 (2008).

    Article  ADS  Google Scholar 

  53. Benyamini, A. et al. Fragility of the dissipationless state in clean two-dimensional superconductors. Nat. Phys. 15, 947–953 (2019).

    Article  CAS  Google Scholar 

  54. Waters, D. et al. Chern insulators at integer and fractional filling in moiré pentalayer graphene. Phys. Rev. X 15, 011045 (2025).

    CAS  Google Scholar 

  55. Li, H. et al. Electrode-free anodic oxidation nanolithography of low-dimensional materials. Nano Lett. 18, 8011–8015 (2018).

    Article  ADS  CAS  PubMed  Google Scholar 

  56. Xia, L.-Q. et al. Magic continuum in multi-moiré twisted trilayer graphene. Preprint at https://arxiv.org/abs/2509.03583 (2025).

  57. Mahapatra, P. S. et al. Quantum criticality and tunable Griffiths phase in superconducting twisted trilayer graphene. Preprint at https://arxiv.org/abs/2507.10687 (2026).

  58. Okounkova, A. et al. Data for: Anomalous metal and superconducting phases in rhombohedral graphene. Zenodo https://doi.org/10.5281/zenodo.21844495 (2026).

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Acknowledgements

We thank B. Spivak, S. Kivelson and A. Kapitulnik for valuable discussions. We also thank UBC research associate S. Lüscher and students F. Talebi and E. Cornick for helpful contributions.

Funding

Research on superconductivity was supported by the Army Research Office under award no. W911NF-25-1-0012. Sample development was supported by the University of Washington Molecular Engineering Materials Center, a U.S. National Science Foundation Materials Research Science and Engineering Center (DMR-2308979). Device fabrication was supported by National Science Foundation (NSF) CAREER award no. DMR-2041972. Experiments at the University of British Columbia were undertaken with support from the Natural Sciences and Engineering Research Council of Canada; the Canada Foundation for Innovation; the Canadian Institute for Advanced Research; the Max Planck-UBC-UTokyo Centre for Quantum Materials and the Canada First Research Excellence Fund, Quantum Materials and Future Technologies Program; and the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation programme, grant agreement no. 951541. M.Y. acknowledges support from the State of Washington-funded Clean Energy Institute. Work at Oak Ridge National Laboratory (ORNL) was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. K.W. and T.T. acknowledge support from the JSPS KAKENHI (grant nos. 21H05233 and 23H02052) and World Premier International Research Center Initiative (WPI), MEXT, Japan. This work made use of shared fabrication facilities at the University of Washington provided by NSF MRSEC 2308979.

Author information

Author notes

  1. These authors contributed equally: Anna Okounkova, Abigail Sohm, Tobias Faehndrich

Authors and Affiliations

  1. Department of Physics, University of Washington, Seattle, WA, USA

    Anna Okounkova, Manish Kumar, Derek Waleffe & Matthew Yankowitz

  2. Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA

    Abigail Sohm & Matthew Yankowitz

  3. Department of Physics and Astronomy, University of British Columbia, Vancouver, British Columbia, Canada

    Tobias Faehndrich & Joshua Folk

  4. Quantum Matter Institute, University of British Columbia, Vancouver, British Columbia, Canada

    Tobias Faehndrich & Joshua Folk

  5. Materials Science and Technology Division, Physical Sciences Directorate, Oak Ridge National Laboratory, Oak Ridge, TN, USA

    Jiaqiang Yan

  6. Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan

    Kenji Watanabe

  7. Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan

    Takashi Taniguchi

Authors

  1. Anna Okounkova
  2. Abigail Sohm
  3. Tobias Faehndrich
  4. Manish Kumar
  5. Derek Waleffe
  6. Jiaqiang Yan
  7. Kenji Watanabe
  8. Takashi Taniguchi
  9. Joshua Folk
  10. Matthew Yankowitz

Contributions

A.O. and A.S. fabricated the devices. A.O., A.S. and T.F. measured the devices and analysed the data, with assistance from M.K. and D.W. J.Y. provided the WSe2 crystals. K.W. and T.T. provided the hBN crystals. J.F. and M.Y. supervised the project.

Corresponding authors

Correspondence to Joshua Folk or Matthew Yankowitz.

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Competing interests

The authors declare no competing interests.

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Extended data figures and tables

Extended Data Fig. 1 Device image and reproduction of selected measurements across contact pairs.

a, Optical micrograph of the device from the main text with the source, drain and voltage probes labelled. Scale bar, 5 μm. b, Measurement of ρxx versus Vb at Vt = 2.30 V for selected values of Vsg, showing that the AM and SC resistance values are independent of the silicon gate voltage. The exception is Vsg = −20 V, at which the contacts become insulating and the measurement for all Vb is unreliable. c, Maps of ρxx for all three longitudinal voltage pairs as a function of Vt and Vb at base temperature. All panels below each map correspond to the associated contact pair. d, Measurements of ρxx versus Vb and B⊥ taken at B∥ = 0, Vt = 1.10 V. e, Measurements of dV/dI versus Vb and Idc taken at Vt = 3.00 V, B⊥ = 0 and B∥ = 1.0 T. f, Measurements of dV/dI versus Idc and T taken at Vt = 3.00 V, Vb = −3.08 V, B⊥ = 0 and B∥ = 350 mT. g, Traces of dV/dI versus Idc at selected T corresponding to the colour-coded lines in f.

Extended Data Fig. 2 Characterization of SC and AM pockets in a second device.

a, Map of ρxx versus Vb and Vt taken at base temperature and zero magnetic field. b, Zoomed-in map at B∥ = 350 mT. The footprint of zero-resistance and finite-resistance states closely resembles that of Fig. 2b. c, Line traces from b taken at Vt = 2.40 V (blue), at which the SC and AM are adjacent, and at Vt = 1.00 V (pink), at which only the AM is present. d, Measurement of ρxx versus Vb and T at B∥ = 350 mT and fixed Vt = 3.24 V. e, Same as d with fixed Vt = 1.00 V. f, Measurement of ρxx versus Vb and B⊥ under the same conditions as d. g, Same measurement as f at the Vt value from e. h, Measurement of dV/dI versus Idc and B⊥ taken at B∥ = 350 mT, Vt = 3.24 V and Vb = −1.83 V. i, Zoomed-in map from h over a smaller range of B⊥. All salient features from the primary device are reproduced, although the second device is evidently less homogeneous.

Extended Data Fig. 3 Inhomogeneity between contact pairs in a second device.

a, Optical micrograph of the second device with the source, drain and voltage probes labelled. Scale bar, 5 μm. b, Maps of ρxx versus Vb and Vt at B∥ = 350 mT for voltage pairs Vxx1 (left) and Vxx2 (right). Vxx1 shows both the SC and AM pockets, whereas Vxx2 shows only the SC pocket clearly. The footprint of the AM pocket is evident in Vxx2 but the resistance exceeds that of the surrounding normal state. c, Measurement of resistance versus Vb and T taken at Vt = 2.70 V and B∥ = 350 mT for both Vxx pairs and the Vxy pair. d, Measurement of resistance versus Vb and B⊥ taken at Vt = 3.24 V and B∥ = 350 mT for both Vxx pairs and the Vxy pair. e, Measurement of dV/dI versus Vb and Idc taken at Vt = 3.24 V for both Vxx pairs and the Vxy pair. f, Measurement of dV/dI versus Idc and T taken at Vt = 3.24 V and Vb = −1.83 V for both Vxx pairs and the Vxy pair. Across all measurements, ρxy is finite in the AM region and tends to vanish in the SC region, although less reliably than in the primary device. The boundaries of the SC and AM states are consistent across all contact pairs and comparable with those of the primary device, but the measured resistance values vary substantially.

Extended Data Fig. 4 Non-monotonic current dependence of the anomalous metal in a second device.

a, Measurement of dV/dI versus Vb and Idc taken at Vt = 3.24 V, B⊥ = 0, B∥ = 350 mT and base temperature. b, Measurement of dV/dI versus Idc and T taken under the same conditions as a with Vb = −1.83 V. c, Traces of dV/dI versus Idc at selected T corresponding to the colour-coded lines in b. d, Integrated I–V curves from b. e, Same as b with Vb = −1.88 V. f, Selected traces from e. g, Integrated I–V curves from e. The salient features from the primary device are reproduced.

Extended Data Fig. 5 Characterization of SC and AM pockets at B∥ = 30 mT.

a, Measurement of ρxx versus Vb and T at fixed Vt = 3.25 V. The zero-resistance pocket corresponds to the SC. b, Measurement of ρxx versus Vb and B⊥ at the same Vt. c, Measurement of dV/dI versus Idc and B⊥ at Vb = −3.38 V and Vt = 3.25 V. d–f, Corresponding ρxy and dV/dIxy measurements for a–c, respectively. g–i, Comparable measurements with a–c at fixed Vt = 1.1 V. The finite-resistance pocket corresponds to the AM. For i, the measurement is taken at Vb = −3.88 V. j–l, Corresponding ρxy and dV/dIxy measurements for g–i, respectively.

Extended Data Fig. 6 Hysteretic superconductivity suppressed by B∥.

a, Measurement of dV/dI versus Idc and B⊥ at B∥ = 0, Vt = 3.08 V and Vb = −3.06 V, sweeping B⊥ from positive to negative, as indicated by the black arrow. b, Same as a but sweeping B⊥ from negative to positive. c,d, Same as a,b at B∥ = 50 mT. The hysteresis observed at B∥ = 0 is strongly suppressed. e–h, Corresponding dV/dIxy measurements for a–d.

Extended Data Fig. 7 Evolution of the SC and AM pockets with B∥.

a, Map of ρxx versus Vb and Vt taken at base temperature, B⊥ = 0 and B∥ = 0. b–g, Same map at B∥ = 75 mT, 100 mT, 215 mT, 280 mT, 1.5 T and 3.5 T, respectively.

Extended Data Fig. 8 Landau fan diagram taken across the superconductor.

a, Map of ρxx versus Vb and Vt taken at zero magnetic field and base temperature. b, Landau fan diagram taken along the dashed black line in a at fixed Vt = 3.20 V. c, Corresponding fast Fourier transform. The vertical dashed black line indicates the position of the SC pocket at B⊥ = 0. Horizontal dashed black lines mark the frequencies corresponding to degeneracies of two (half metal) and four (unpolarized metal). The superconductor is sandwiched between a half metal to the right and an unpolarized metal to the left.

Extended Data Fig. 9 BKT analysis of the SC and AM pockets.

a, Measurement of dV/dI versus Idc and T taken at Vt = 3.00 V, Vb = −3.08 V, B⊥ = 0 and B∥ = 350 mT (reproduced from Fig. 3b). b, Same as a for dV/dIxy. c, Integrated I–V curves from a plotted on a log–log scale. The dashed black line corresponds to V ∝ I3, giving TBKT = 61 mK. Inset, power-law exponent α extracted at each temperature from a, in which V ∝ Iα. The horizontal dashed black line marks α = 3. d, Same as a with Vb = −3.23 V (reproduced from Fig. 3e). e, Same as d for dV/dIxy. f, Integrated I–V curves from d plotted on a log–log scale. The α = 3 BKT criterion is not satisfied over any broad range of Idc.

Extended Data Fig. 10 Non-monotonic current dependence of the anomalous metal at Vt = 2.30 V.

a, Measurement of dV/dI versus Vb and Idc taken at Vt = 2.30 V, B⊥ = 0 and B∥ = 350 mT. This measurement corresponds to the same gate trajectory as Fig. 2f but using the Vxx3 contact pair. Top inset is the selected dV/dI trace taken at Vb = −3.17 V. Bottom inset is the integrated I–V curve from the top inset. b, Measurement of dV/dI versus Idc and T taken under the same conditions as a with Vb = −3.23 V. c, Traces of dV/dI versus Idc at selected T corresponding to the colour-coded lines in b. d, Integrated I–V curves from b. Inset, measurement of dV/dI versus Idc and B⊥ at the same gate voltages as b. e, Same as b with Vb = −3.37 V. f, Selected traces from e. g, Integrated I–V curves from e.

Extended Data Fig. 11 Characterization of SC and AM pockets at B∥ = 1.0 T.

a, Map of ρxx versus Vb and Vt taken at B∥ = 1.0 T, B⊥ = 0 and base temperature. b, Measurement of dV/dI versus Vb and Idc taken at Vt = 3.35 V. c, Same as b for dV/dIxy. d, Measurement of dV/dI versus Vb and Idc taken at Vt = 3.00 V. e, Same as d for dV/dIxy. f–i, Measurements of ρxx versus Vb and T for Vt = 3.25, 3.00, 2.30 and 1.40 V, respectively.

Extended Data Fig. 12 Characterization of a further SC pocket for D < 0 in the primary device and secondary device.

a, Map of ρxx at B∥ = 0 and base temperature in device 1. b, Measurement of ρxx versus Vb and T taken with Vt = −1.7 V, corresponding to the dashed grey line in a. c, Measurement of ρxx versus Vb and B∥ taken with Vt = −1.69 V, corresponding to the dashed white line in a. d, Measurement of dV/dI versus Idc and B⊥ at Vb = 4.00 V and Vt = −1.70 V. e, Measurement of ρxx versus T taken in the SC pocket with Vb = 4.50 V and Vt = −1.68 V. f, Map of ρxx at B∥ = 0 and base temperature in device 2. g, Measurement of ρxx versus Vb and T taken with Vt = −1.82 V, corresponding to the dashed black line in f. h, Measurement of dV/dI versus Idc and B⊥ at Vb = 2.85 V and Vt = −1.84 V. i, Measurement of ρxx versus T taken in the SC pocket with Vb = 2.85 V and Vt =−1.84 V.

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Okounkova, A., Sohm, A., Faehndrich, T. et al. Anomalous metal and superconducting phases in rhombohedral graphene. Nature (2026). https://doi.org/10.1038/s41586-026-11033-1

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